Infineon IRFS7434TRLPBF: High-Performance 60V Dual N-Channel MOSFET in PQFN 5x6 Package
The relentless pursuit of higher power density and greater efficiency in modern electronics drives the continuous innovation in power semiconductor packaging and device technology. The Infineon IRFS7434TRLPBF stands as a prime example of this evolution, offering designers a compact, high-performance solution for demanding power management applications. This device integrates two independent N-channel MOSFETs in an advanced PQFN 5x6 (Power Quad Flat No-Leads) package, delivering exceptional electrical characteristics and thermal performance.
Engineered for operation with a drain-source voltage (VDS) of 60V, this MOSFET is ideally suited for a wide array of applications, including synchronous rectification in DC-DC converters, motor control systems, and high-current switching in industrial and automotive environments. Its dual-chip configuration is particularly valuable for building space-critical half-bridge or full-bridge topologies, effectively reducing the component count and overall PCB footprint.
A key highlight of the IRFS7434TRLPBF is its remarkably low on-state resistance (RDS(on)). With a typical value of just 1.8 mΩ at 10 V (VGS), it ensures minimal conduction losses. This allows for higher efficiency operation, reduced heat generation, and the ability to handle high continuous drain currents. The low gate charge (QG) of the device further enhances its performance by enabling fast switching transitions, which is critical for high-frequency switching applications that minimize the size of passive components like inductors and capacitors.
The choice of the PQFN 5x6 package is central to its advantages. This package features an exposed thermal pad that provides a very low thermal resistance path from the silicon die to the printed circuit board. By facilitating efficient heat dissipation, the package allows the MOSFET to sustain high power levels without overheating, thereby improving system reliability and longevity. The small form factor is a direct enabler of higher power density designs.
In summary, the Infineon IRFS7434TRLPBF represents a significant step forward in power MOSFET technology, combining high voltage capability, ultra-low resistance, and a thermally efficient dual-die package to meet the challenges of next-generation power electronics.
ICGOOODFIND: The Infineon IRFS7434TRLPBF is a superior choice for engineers seeking to maximize efficiency and power density in 60V systems. Its dual N-channel design in a compact PQFN 5x6 package, characterized by an extremely low RDS(on) and excellent thermal performance, makes it an optimal component for high-current switching and motor control applications where board space and thermal management are critical constraints.
Keywords: Power MOSFET, Low RDS(on), PQFN 5x6 Package, Synchronous Rectification, Thermal Performance.
