Infineon BSC190N12NS3G: A High-Performance 120V OptiMOS 5 Power MOSFET for Efficient Switching Applications

In the relentless pursuit of higher efficiency and power density in modern electronics, the choice of switching components is paramount. The Infineon BSC190N12NS3G stands out as a premier solution, a 120V N-channel Power MOSFET engineered with Infineon's advanced OptiMOS™ 5 technology. This device is specifically designed to set new benchmarks in performance for a wide array of demanding switching applications, from server and telecom power supplies to motor drives and solar inverters.

The core of its superiority lies in its exceptional low figure-of-merit (R DS(on) Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 1.9 mΩ at 10 V, the BSC190N12NS3G minimizes conduction losses, allowing for more current to be handled with significantly reduced heat generation. This is complemented by an ultra-low gate charge (Q G), which ensures swift switching transitions. Faster switching translates directly to lower switching losses, especially at high frequencies, enabling designers to increase the operating frequency of their circuits. This, in turn, allows for the use of smaller passive components like inductors and capacitors, leading to a substantial increase in overall power density.

Furthermore, the device boasts a robust and reliable design. It features an avalanche ruggedness rating, ensuring it can withstand unexpected voltage spikes often encountered in inductive switching environments. The incorporation of a 100% silicon-sourced gate oxide enhances long-term reliability and robustness under strenuous operating conditions. The BSC190N12NS3G is also housed in an SuperSO8 package (PG-TDSON-8), which offers an excellent thermal performance-to-footprint ratio. This package minimizes parasitic inductance and provides a very low thermal resistance, channeling heat away from the silicon die efficiently and supporting higher power dissipation.

Designers will appreciate the benefits this MOSFET brings to their systems: improved energy efficiency, which is critical for meeting modern environmental standards; reduced cooling requirements, which can lower system cost and complexity; and the ability to create more compact and lighter end-products.

ICGOOODFIND: The Infineon BSC190N12NS3G exemplifies the pinnacle of power MOSFET design, offering an outstanding blend of extremely low R DS(on), minimal switching losses, and superior thermal performance. It is an indispensable component for engineers aiming to push the boundaries of efficiency and power density in their next-generation power conversion systems.

Keywords: OptiMOS 5, Low RDS(on), High Efficiency, Power Density, SuperSO8 Package.