Infineon IPD70N03S4L-04: High-Performance N-Channel MOSFET for Automotive and Power Management Applications
The demand for highly efficient, robust, and compact power switching solutions continues to grow, particularly in the automotive sector and advanced power management systems. Addressing this need, the Infineon IPD70N03S4L-04 stands out as a high-performance N-channel power MOSFET engineered to deliver exceptional efficiency and reliability in demanding applications.
This MOSFET is built using Infineon’s advanced OptiMOS™ technology, which is renowned for its low on-state resistance and superior switching performance. With a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 70 A, the device is capable of handling high power levels while minimizing conduction losses. Its ultra-low RDS(on) of just 3.7 mΩ ensures reduced power dissipation, which is critical for improving overall system efficiency and thermal management. This makes the IPD70N03S4L-04 particularly suitable for applications such as DC-DC converters, motor control circuits, and load switching systems where energy efficiency is a top priority.
A key strength of this MOSFET lies in its AEC-Q101 qualification, confirming its compliance with stringent automotive reliability standards. It is designed to operate flawlessly in harsh environments, with enhanced resistance to temperature fluctuations, mechanical stress, and electrical overloads. This makes it an ideal choice for a wide range of automotive applications, including electric power steering (EPS), transmission control, and battery management systems (BMS).
In addition to its automotive uses, the IPD70N03S4L-04 is also highly effective in industrial and consumer power management applications. Its low gate charge and high switching speed allow for efficient operation in high-frequency circuits such as synchronous rectification and switch-mode power supplies (SMPS). The device is offered in a space-saving D2PAK (TO-263) package, providing excellent thermal performance and making it suitable for space-constrained designs.
The Infineon IPD70N03S4L-04 is a top-tier N-channel MOSFET that combines high current capability, ultra-low RDS(on), and automotive-grade robustness. Its optimized performance makes it an excellent solution for modern power electronic designs aiming for efficiency, compactness, and reliability.
Keywords:
OptiMOS™ Technology, AEC-Q101 Qualified, Low RDS(on), Automotive Applications, High Switching Speed
