**HMC554ALC3B: A 6-20 GHz GaAs pHEMT MMIC Medium Power Amplifier**

The **HMC554ALC3B** represents a significant advancement in **monolithic microwave integrated circuit (MMIC)** technology, specifically engineered for demanding applications across the **6 GHz to 20 GHz** frequency spectrum. This medium power amplifier leverages **Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT)** technology, which is renowned for its superior high-frequency performance, low noise figure, and excellent power efficiency. Its design is optimized to deliver robust performance in a compact, surface-mount package, making it an ideal solution for modern space-constrained systems.

A key performance attribute of the HMC554ALC3B is its **exceptional gain flatness**, typically achieving **17 dB of small signal gain** across the entire Ku-band and extending into portions of the C and K-bands. This consistency is critical for maintaining signal integrity in wideband applications. Furthermore, the amplifier delivers a formidable **+24 dBm of saturated output power (PSAT)**, with an **output IP3 of approximately +30 dBm**, ensuring strong linearity and the ability to handle complex modulation schemes without significant distortion. This makes it exceptionally suitable for **electronic warfare (EW)**, radar systems, satellite communications, and test and measurement instrumentation where dynamic range and signal fidelity are paramount.

The device is designed for ease of integration, requiring a single positive supply voltage between **+4V to +6V** and drawing a typical current of **220 mA**. It is housed in a leadless, RoHS-compliant **4x4 mm LCC/Ceramic package**, which includes exposed metal for enhanced thermal management. The internal matching is complete to 50 Ohms on both input and output, simplifying board design and reducing the need for external components.

**ICGOOODFIND**: The HMC554ALC3B stands out as a highly reliable and versatile MMIC power amplifier, offering an optimal blend of wide bandwidth, high linearity, and medium power output in a miniature form factor, addressing the core needs of next-generation RF and microwave systems.

**Keywords**: **GaAs pHEMT**, **MMIC Amplifier**, **6-20 GHz**, **Saturated Output Power**, **Wideband Gain**.