Infineon BC817K40E6327HTSA1: High-Performance NPN Bipolar Junction Transistor for General-Purpose Amplification and Switching Applications

Release date:2025-10-29 Number of clicks:66

Infineon BC817K40E6327HTSA1: High-Performance NPN Bipolar Junction Transistor for General-Purpose Amplification and Switching Applications

The Infineon BC817K40E6327HTSA1 is a robust NPN bipolar junction transistor (BJT) engineered to deliver exceptional performance in a compact SMT package. As a member of the renowned BC817 series, this component is optimized for a broad spectrum of electronic applications, ranging from signal amplification in audio stages to high-speed switching in digital logic interfaces and driver circuits. Its design prioritizes reliability, efficiency, and versatility, making it a preferred choice for both consumer electronics and industrial systems.

Key Features and Electrical Characteristics

Housed in a space-saving SOT-23 package, the BC817K40E6327HTSA1 is designed for high-density PCB layouts. It is characterized by a high current gain (hFE) of up to 400 at specific operating conditions, ensuring excellent amplification of weak signals with minimal distortion. The device supports a collector current (IC) of up to 500 mA and operates with a collector-emitter voltage (VCEO) of 45 V, providing sufficient headroom for various low-power applications. Additionally, it offers low saturation voltage, which enhances energy efficiency in switching operations by minimizing power loss during the "on" state.

Application Versatility

This transistor excels in diverse roles. In amplification, it is commonly used in audio preamplifiers, sensor signal conditioning, and RF modules where linearity and gain are critical. For switching, it efficiently drives relays, LEDs, and other loads in microcontroller-based systems, thanks to its fast switching speed that reduces transition times and improves overall system responsiveness. Its compatibility with automated assembly processes further streamlines manufacturing.

Reliability and Thermal Performance

Infineon has engineered this component for durability. It operates effectively over a temperature range of -55 °C to +150 °C, ensuring stability in harsh environments. The device also incorporates lead-free plating and is compliant with RoHS directives, aligning with global environmental standards.

ICGOOODFIND: The Infineon BC817K40E6327HTSA1 stands out as a versatile and efficient solution for modern electronic design, offering a balance of amplification capability and switching performance in a miniature form factor.

Keywords: NPN Transistor, General-Purpose Amplification, Switching Applications, SOT-23 Package, High Current Gain

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