Infineon IPD082N10N3G: A High-Performance 80V Dual N-Channel StrongIRFET Power MOSFET

The Infineon IPD082N10N3G represents a significant advancement in power semiconductor technology, integrating two 80V N-channel MOSFETs in a single compact package. Designed using Infineon’s proprietary StrongIRFET™ technology, this component delivers exceptional efficiency and robustness, making it ideal for a wide range of power management applications. With a continuous drain current rating of 8.2 A per channel and an ultra-low typical on-state resistance (RDS(on)) of just 8.2 mΩ at 10 V, the device minimizes conduction losses and enhances thermal performance.

Key benefits of the IPD082N10N3G include its high current handling capability, optimized switching characteristics, and excellent reliability under strenuous operating conditions. The dual-channel configuration allows designers to simplify circuit layout and reduce component count in applications such as DC-DC converters, motor control systems, and automotive power modules. Its thermally enhanced DSO-8 package ensures effective heat dissipation, supporting sustained operation in high-temperature environments.

Moreover, the device’s avalanche ruggedness and integrated protection features make it suitable for industrial and automotive applications where durability is critical. By leveraging Infineon’s advanced silicon technology, the IPD082N10N3G offers a compelling combination of performance, integration, and cost-effectiveness.

ICGOOODFIND:

The Infineon IPD082N10N3G stands out as a highly integrated, efficient, and reliable power MOSFET solution, perfect for modern high-demand power electronics designs.

Keywords:

StrongIRFET, Dual N-Channel, Low RDS(on), Power Efficiency, Avalanche Rugged