Infineon IPC100N04S51R9ATMA1: A Benchmark 40V Single N-Channel MOSFET in Power-SO8 Package

In the realm of power electronics, efficiency, thermal performance, and space savings are paramount. The Infineon IPC100N04S51R9ATMA1 stands out as a superior single N-Channel MOSFET engineered to meet these demanding requirements. Encased in the robust Power-SO8 package, this 40V device is designed to deliver exceptional performance in a compact form factor, making it an ideal choice for a wide array of modern applications.

At the heart of this component's appeal is its remarkably low on-state resistance (RDS(on)) of just 1.9 mΩ. This exceptionally low resistance is a critical figure of merit, as it directly translates to minimized conduction losses. When the MOSFET is switched on, less power is wasted as heat, leading to significantly higher overall system efficiency. This characteristic is vital for applications like power management in computing, battery protection circuits, and motor drives, where every watt saved contributes to cooler operation and longer battery life.

The Power-SO8 (PG-TDSON-8) package is a key enabler of its performance. This package technology is specifically designed to optimize thermal dissipation and power density. It features an exposed thermal pad that allows for efficient heat transfer from the silicon die to the printed circuit board (PCB). This superior thermal capability means the device can handle high continuous drain current (ID = 100 A) without overheating, ensuring reliability under strenuous operating conditions. The compact footprint of the package also allows designers to save valuable board space, which is crucial for today's increasingly miniaturized electronic devices.

Furthermore, the device is characterized by its low gate charge (QG), which enables fast switching speeds. This is essential for high-frequency switching regulators and DC-DC converters, where reducing switching losses is just as important as minimizing conduction losses. The combination of low RDS(on) and low QG ensures that the MOSFET operates efficiently across a wide range of frequencies and load conditions.

The Infineon IPC100N04S51R9ATMA1 is particularly suited for demanding roles such as:

Synchronous rectification in switched-mode power supplies (SMPS).

Motor control and drive circuits in industrial automation and consumer appliances.

Load switches and battery management systems (BMS) in portable devices and power tools.

DC-DC conversion in server, telecom, and automotive power systems.

ICGOOODFIND: The Infineon IPC100N04S51R9ATMA1 sets a high standard with its industry-leading 1.9 mΩ RDS(on), high current handling, and excellent thermal performance in the space-saving Power-SO8 package, making it a top-tier solution for enhancing power efficiency and density.

Keywords: Low RDS(on), Power-SO8 Package, High Efficiency, Thermal Performance, Power Management.