Infineon IAUC120N04S6N013: High-Performance OptiMOS 6 Power MOSFET for Automotive and Industrial Applications

The relentless push for higher efficiency, greater power density, and enhanced reliability in automotive and industrial systems demands a new generation of power semiconductors. Addressing this need, Infineon Technologies has introduced the IAUC120N04S6N013, a benchmark-setting power MOSFET from its advanced OptiMOS™ 6 40 V family. This device is engineered to deliver uncompromising performance in the most demanding environments, from electric vehicle (EV) subsystems to high-current industrial motor drives.

At the heart of this MOSFET's superiority is its exceptionally low typical on-state resistance (R DS(on)) of just 1.0 mΩ. This ultra-low resistance is pivotal in minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for smaller cooling solutions. For applications like 48V board net systems in mild-hybrid vehicles or high-amperage DC/DC converters, this characteristic is critical for maximizing battery life and overall performance.

Beyond raw efficiency, the IAUC120N04S6N013 is designed for robustness and reliability. It boasts an outstanding avalanche ruggedness and is qualified according to the stringent AEC-Q101 standard for automotive applications. This ensures consistent operation under the harsh conditions of voltage spikes, extreme temperatures, and frequent load cycles typical in automotive electronics. Furthermore, its low gate charge (Q G) and figures of merit optimize switching performance, enabling higher switching frequencies that allow for the use of smaller passive components like inductors and capacitors.

The combination of high power density and proven reliability makes it an ideal solution for a wide array of applications. In the automotive sector, it is perfectly suited for load switches, motor control (e.g., for pumps and fans), and battery management systems (BMS). In the industrial realm, it excels in server and telecom power supplies, solar inverters, and industrial automation equipment where efficiency and durability are paramount.

ICGOOODFIND: The Infineon IAUC120N04S6N013 stands out as a premier OptiMOS™ 6 power MOSFET, setting a new standard with its industry-leading 1.0 mΩ R DS(on) and superior switching characteristics. Its AEC-Q101 qualification and exceptional avalanche ruggedness make it a robust, high-efficiency cornerstone for next-generation automotive and industrial power designs, ensuring systems are both more powerful and more reliable.

Keywords: OptiMOS™ 6, Low R DS(on), AEC-Q101, Automotive Grade, Power Density.